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IXTK 80N25
Symbol Test Conditions
(T J = 25°C unless otherwise specified)
Characteristic values
Min. Typ. Max.
TO-264 AA Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
V DS = 10 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
R G = 1.0 ? (External)
40
56
6000
1125
420
28
25
88
S
pF
pF
pF
ns
ns
ns
t f
24
ns
Dim.
Millimeter
Min. Max.
Min.
Inches
Max.
Q g(on)
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
240
40
110
nC
nC
nC
A
A1
A2
b
b1
b2
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
c
0.53 0.83
.021 .033
R thJC
R thCK
0.15
0.23 K/W
K/W
D
E
e
J
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
1.020 1.030
.780 .786
.215 BSC
.000 .010
Source-Drain Diode
Ratings and Characteristics
K
L
L1
P
Q
Q1
R
R1
S
T
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
Symbol
Test Conditions
(T J = 25°C unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
t rr
Q rr
V GS = 0V
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
I F = 25A, -di/dt = 100 A/μs, V R = 100V
300
3.0
80
320
1.5
A
A
V
ns
μ C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
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